MMIX4G20N250
IXYS
IXYS
IGBT H BRIDGE 2500V 23A 24SMPD
$81.52
Available to order
Reference Price (USD)
20+
$55.68000
Exquisite packaging
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MMIX4G20N250
$81.52
Product details
The MMIX4G20N250 from IXYS is a high-performance IGBT array designed for demanding industrial applications. This discrete semiconductor product offers exceptional switching capabilities and thermal stability, making it ideal for power electronics systems. As part of the Transistors - IGBTs - Arrays category, it delivers reliable performance in high-voltage environments while maintaining energy efficiency. The robust construction ensures long-term durability even under continuous operation. Key features include optimized gate drive characteristics, low saturation voltage, and excellent short-circuit withstand capability. These IGBT arrays are commonly used in motor drives, renewable energy inverters, and industrial welding equipment. For automotive applications, they provide precise control in electric vehicle power systems. Manufacturers of UPS systems rely on these components for clean power conversion. Upgrade your power management solutions with IXYS's advanced technology. Contact our sales team today for pricing details and technical specifications on MMIX4G20N250.
General specs
- Product Status: Active
- IGBT Type: -
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 2500 V
- Current - Collector (Ic) (Max): 23 A
- Power - Max: 100 W
- Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 20A
- Current - Collector Cutoff (Max): 10 µA
- Input Capacitance (Cies) @ Vce: 1.19 nF @ 15 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 24-SMD Module, 9 Leads
- Supplier Device Package: 24-SMPD
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