FII50-12E
IXYS
IXYS
IGBT H BRIDGE 1200V 50A I4PAK5
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FII50-12E
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Product details
The FII50-12E from IXYS represents advanced IGBT array technology in the Discrete Semiconductor Products market. Specifically designed for Transistors - IGBTs - Arrays applications, this product delivers superior power handling in compact form factors. Its innovative design reduces electromagnetic interference while improving thermal dissipation. The device offers multiple advantages including stable switching characteristics under varying loads, high current density, and excellent avalanche ruggedness. These properties make it perfect for arc welding equipment, electromagnetic launch systems, and high-power LED drivers. The FII50-12E is also implemented in railway traction converters and large-scale battery storage systems. With IXYS's quality assurance behind every unit, engineers can design with confidence. Request a sample or detailed specifications for FII50-12E through our convenient online inquiry system today.
General specs
- Product Status: Obsolete
- IGBT Type: NPT
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 50 A
- Power - Max: 200 W
- Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 30A
- Current - Collector Cutoff (Max): 400 µA
- Input Capacitance (Cies) @ Vce: 2 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: i4-Pac™-5
- Supplier Device Package: ISOPLUS i4-PAC™
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