FII30-06D
IXYS
IXYS
IGBT H BRIDGE 600V 30A I4PAK5
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Reference Price (USD)
25+
$10.08160
Exquisite packaging
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FII30-06D
$0.00
Product details
The FII30-06D by IXYS sets new standards in IGBT array technology for industrial power applications. As part of Discrete Semiconductor Products, this device integrates multiple high-performance IGBTs in an optimized array configuration. It delivers exceptional thermal management through advanced packaging technology, ensuring stable operation at high temperatures. The product features include balanced current sharing, low conduction losses, and fast reverse recovery characteristics. These attributes make it indispensable for uninterruptible power supplies, plasma generator systems, and high-power RF amplifiers. Wind turbine converters benefit from its reliable performance in harsh environments. The FII30-06D is also widely adopted in traction systems for electric buses. IXYS combines cutting-edge semiconductor technology with rigorous quality control in this product. Contact our experts today to learn how FII30-06D can enhance your application's power efficiency and reliability.
General specs
- Product Status: Obsolete
- IGBT Type: NPT
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 30 A
- Power - Max: 100 W
- Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A
- Current - Collector Cutoff (Max): 600 µA
- Input Capacitance (Cies) @ Vce: 1.1 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: i4-Pac™-5
- Supplier Device Package: ISOPLUS i4-PAC™
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