FII24N17AH1
IXYS
IXYS
IGBT H BRIDGE 1700V 18A I4PAK5
$0.00
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Reference Price (USD)
25+
$34.50720
Exquisite packaging
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Product details
Discover the power management capabilities of IXYS's FII24N17AH1, a sophisticated IGBT array in the Transistors - IGBTs - Arrays category. This discrete semiconductor solution is engineered for high-current switching applications requiring precision and durability. The device incorporates temperature-compensated characteristics that maintain consistent performance across operating conditions. Notable features include soft switching behavior, high input impedance, and excellent dv/dt capability. Industrial automation systems utilize these arrays for servo motor control, while energy companies implement them in smart grid infrastructure. The FII24N17AH1 is equally effective in medical imaging equipment power supplies and large-scale audio amplifiers. With IXYS's reputation for quality, this product delivers long service life even in cyclical loading applications. Explore the technical advantages of this IGBT array - submit your inquiry through our online portal for prompt response and competitive pricing.
General specs
- Product Status: Active
- IGBT Type: NPT
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 1700 V
- Current - Collector (Ic) (Max): 18 A
- Power - Max: 140 W
- Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 16A
- Current - Collector Cutoff (Max): 100 µA
- Input Capacitance (Cies) @ Vce: 2.4 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: i4-Pac™-5
- Supplier Device Package: ISOPLUS i4-PAC™