IXA40RG1200DHG-TUB
IXYS
IXYS
IGBT H BRIDGE 1200V 63A SMPD
$13.80
Available to order
Reference Price (USD)
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$13.80200
500+
$13.66398
1000+
$13.52596
1500+
$13.38794
2000+
$13.24992
2500+
$13.1119
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IXA40RG1200DHG-TUB
$13.80
Product details
IXYS's IXA40RG1200DHG-TUB represents the next generation of IGBT array technology in Discrete Semiconductor Products. This transistor array combines high current density with superior thermal performance for power conversion applications. The device features advanced trench gate technology that minimizes conduction losses while delivering fast switching speeds. With built-in protection against overcurrent and overtemperature conditions, this product ensures system reliability. Engineers particularly value its parallel operation capability and uniform current distribution across arrays. Typical applications include solar power inverters where efficiency is critical, industrial motor controllers requiring precise speed regulation, and medical power supplies demanding clean energy delivery. The IXA40RG1200DHG-TUB is also suitable for traction systems in railway applications. Discover how this IGBT array can optimize your power electronics design. Request a quote now for IXA40RG1200DHG-TUB and explore IXYS's complete transistor solutions.
General specs
- Product Status: Active
- IGBT Type: PT
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 63 A
- Power - Max: 230 W
- Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 35A
- Current - Collector Cutoff (Max): 150 µA
- Input Capacitance (Cies) @ Vce: -
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 9-SMD Module
- Supplier Device Package: ISOPLUS-SMPD™.B
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