FII24N17AH1S
IXYS
IXYS
IGBT H BRIDGE 1700V 18A I4PAK5
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Reference Price (USD)
25+
$34.99440
Exquisite packaging
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FII24N17AH1S
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Product details
IXYS presents the FII24N17AH1S, a high-reliability IGBT array designed for critical power electronics applications. This Discrete Semiconductor Product excels in high-frequency switching scenarios with its optimized gate structure and low switching losses. The array configuration provides design flexibility while maintaining synchronized operation across all units. Key characteristics include positive temperature coefficient for easy paralleling, robust short-circuit capability, and minimal leakage current. These features make it ideal for electric vehicle drivetrains, industrial laser systems, and high-voltage DC transmission. The renewable energy sector frequently specifies similar IGBT arrays for photovoltaic inverters. The FII24N17AH1S demonstrates IXYS's commitment to energy-efficient power solutions. Our technical support team is ready to assist with your application requirements - inquire now about availability and volume pricing for this advanced transistor array.
General specs
- Product Status: Active
- IGBT Type: NPT
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 1700 V
- Current - Collector (Ic) (Max): 18 A
- Power - Max: 140 W
- Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 16A
- Current - Collector Cutoff (Max): 100 µA
- Input Capacitance (Cies) @ Vce: 2.4 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -
- Mounting Type: Through Hole
- Package / Case: i4-Pac™-5
- Supplier Device Package: ISOPLUS i4-PAC™