IXA30PG1200DHG-TRR
IXYS
IXYS
IGBT H BRIDGE 1200V 43A SMPD
$13.66
Available to order
Reference Price (USD)
1+
$13.66000
500+
$13.5234
1000+
$13.3868
1500+
$13.2502
2000+
$13.1136
2500+
$12.977
Exquisite packaging
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IXYS IXA30PG1200DHG-TRR is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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IXA30PG1200DHG-TRR
$13.66
Product details
The IXA30PG1200DHG-TRR by IXYS delivers professional-grade performance in the Transistors - IGBTs - Arrays segment. This discrete semiconductor device integrates multiple IGBT cells with precision-matched characteristics for parallel operation. The product architecture ensures uniform current distribution while minimizing switching losses. Key benefits include enhanced short-circuit withstand time, low saturation voltage, and excellent thermal conductivity. These features make it invaluable for electric vehicle fast-charging stations, industrial plasma cutting systems, and high-power ultrasound generators. The IXA30PG1200DHG-TRR is also specified in satellite power systems and advanced military applications. IXYS's rigorous testing protocols guarantee reliability in mission-critical environments. Learn more about this high-performance IGBT array - our technical team is available to provide application notes and design support for IXA30PG1200DHG-TRR upon request.
General specs
- Product Status: Active
- IGBT Type: PT
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 43 A
- Power - Max: 150 W
- Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 25A
- Current - Collector Cutoff (Max): 2.1 mA
- Input Capacitance (Cies) @ Vce: -
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 9-SMD Module
- Supplier Device Package: ISOPLUS-SMPD™.B
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