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STGW50H65DFB2-4

STMicroelectronics
STGW50H65DFB2-4 Preview
STMicroelectronics
TRENCH GATE FIELD-STOP, 650 V, 5
$5.78
Available to order
Reference Price (USD)
1+
$5.78000
500+
$5.7222
1000+
$5.6644
1500+
$5.6066
2000+
$5.5488
2500+
$5.491
Exquisite packaging
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STMicroelectronics STGW50H65DFB2-4 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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STGW50H65DFB2-4

STGW50H65DFB2-4

$5.78

Product details

Experience unparalleled power control with the STGW50H65DFB2-4 single IGBT transistor by STMicroelectronics. This high-efficiency component is perfect for applications in industrial automation, renewable energy, and automotive systems. The STGW50H65DFB2-4 boasts low energy loss and high switching frequency, making it a top choice for modern power electronics. Its robust design ensures long-term reliability even under high stress and temperature variations. Whether you're designing for high-power or compact systems, the STGW50H65DFB2-4 offers the flexibility and performance you need. Submit your inquiry online to learn more about this advanced IGBT transistor.

General specs

  • Product Status: Active
  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 86 A
  • Current - Collector Pulsed (Icm): 150 A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
  • Power - Max: 272 W
  • Switching Energy: 629µJ (on), 478µJ (off)
  • Input Type: Standard
  • Gate Charge: 151 nC
  • Td (on/off) @ 25°C: 18ns/128ns
  • Test Condition: 400V, 50A, 12Ohm, 15V
  • Reverse Recovery Time (trr): 92 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-4
  • Supplier Device Package: TO-247-4

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