FGA25N120ANTDTU
onsemi
onsemi
IGBT NPT/TRENCH 1200V 50A TO3P
$2.54
Available to order
Reference Price (USD)
1+
$4.36000
10+
$3.92900
450+
$3.08411
900+
$2.78140
1,350+
$2.36714
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FGA25N120ANTDTU
$2.54
Product details
Upgrade your power electronics with the FGA25N120ANTDTU single IGBT transistor from onsemi. This advanced component is engineered for high-efficiency switching in industrial motor drives, renewable energy systems, and medical equipment. The FGA25N120ANTDTU features low conduction losses and superior thermal performance, ensuring reliable operation in demanding conditions. Its fast switching speed and compatibility with various gate drivers make it a preferred choice for power designers. Whether you're working on high-power or precision applications, the FGA25N120ANTDTU delivers consistent performance. Contact us today for more details and pricing information.
General specs
- Product Status: Last Time Buy
- IGBT Type: NPT and Trench
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 50 A
- Current - Collector Pulsed (Icm): 90 A
- Vce(on) (Max) @ Vge, Ic: 2.65V @ 15V, 50A
- Power - Max: 312 W
- Switching Energy: 4.1mJ (on), 960µJ (off)
- Input Type: Standard
- Gate Charge: 200 nC
- Td (on/off) @ 25°C: 50ns/190ns
- Test Condition: 600V, 25A, 10Ohm, 15V
- Reverse Recovery Time (trr): 350 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3P
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