SKW07N120
Infineon Technologies
Infineon Technologies
IGBT, 16.5A, 1200V, N-CHANNEL
$3.54
Available to order
Reference Price (USD)
1+
$3.54000
500+
$3.5046
1000+
$3.4692
1500+
$3.4338
2000+
$3.3984
2500+
$3.363
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SKW07N120
$3.54
Product details
The SKW07N120 by Infineon Technologies is a cutting-edge single IGBT transistor designed for high-power applications. This discrete semiconductor product excels in environments where efficiency and durability are paramount. Featuring excellent thermal conductivity and low switching losses, the SKW07N120 is ideal for use in electric vehicle charging stations, welding equipment, and industrial automation systems. Its robust construction ensures reliable operation even under extreme temperatures and voltage fluctuations. Engineers will appreciate its straightforward installation and compatibility with various drive circuits. Upgrade your power management systems with the SKW07N120 and experience unmatched performance. Contact us today for more details and pricing options.
General specs
- Product Status: Active
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 16.5 A
- Current - Collector Pulsed (Icm): 27 A
- Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 8A
- Power - Max: 125 W
- Switching Energy: 1mJ
- Input Type: Standard
- Gate Charge: 70 nC
- Td (on/off) @ 25°C: 27ns/440ns
- Test Condition: 800V, 8A, 47Ohm, 15V
- Reverse Recovery Time (trr): 60 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3-1
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