STGWA8M120DF3
STMicroelectronics
STMicroelectronics
IGBT
$2.79
Available to order
Reference Price (USD)
600+
$2.35305
Exquisite packaging
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STGWA8M120DF3
$2.79
Product details
Optimize your power electronics with the STGWA8M120DF3 single IGBT transistor from STMicroelectronics. This high-efficiency component is engineered to deliver superior switching performance and thermal management, ensuring long-term reliability in harsh operating conditions. The STGWA8M120DF3 is perfect for applications requiring precise control and high power handling, such as industrial motor drives, UPS systems, and solar inverters. Its low saturation voltage and fast switching speed minimize energy loss, improving overall system efficiency. Designed for easy integration, this IGBT transistor is a must-have for engineers seeking dependable power solutions. Discover how the STGWA8M120DF3 can enhance your next project request a quote now.
General specs
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 16 A
- Current - Collector Pulsed (Icm): 32 A
- Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 8A
- Power - Max: 167 W
- Switching Energy: 390µJ (on), 370µJ (Off)
- Input Type: Standard
- Gate Charge: 32 nC
- Td (on/off) @ 25°C: 20ns/126ns
- Test Condition: 600V, 8A, 33Ohm, 15V
- Reverse Recovery Time (trr): 103 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247 Long Leads
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