NGTB20N120IHRWG
onsemi

onsemi
IGBT TRENCH/FS 1200V 40A TO247
$5.82
Available to order
Reference Price (USD)
1+
$4.73000
30+
$4.01633
120+
$3.48075
510+
$2.96310
1,020+
$2.49900
Exquisite packaging
Discount
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Product details
Maximize power efficiency with the NGTB20N120IHRWG single IGBT transistor by onsemi. This high-quality component is engineered for applications requiring robust switching and thermal stability, such as renewable energy systems, industrial welding machines, and electric vehicle powertrains. The NGTB20N120IHRWG features low switching losses and high current capacity, ensuring reliable performance in demanding conditions. Its compact design and ease of integration make it a favorite among power electronics designers. Whether you're working on large-scale industrial projects or compact consumer electronics, the NGTB20N120IHRWG delivers the performance you need. Get started today by submitting an online inquiry for pricing and availability.
General specs
- Product Status: Obsolete
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 40 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 20A
- Power - Max: 384 W
- Switching Energy: 450µJ (off)
- Input Type: Standard
- Gate Charge: 225 nC
- Td (on/off) @ 25°C: -/235ns
- Test Condition: 600V, 20A, 10Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247