FGH60T65SHD-F155
onsemi

onsemi
IGBT TRENCH/FS 650V 120A TO247
$5.95
Available to order
Reference Price (USD)
1+
$6.35000
10+
$5.70300
450+
$4.43318
900+
$3.97788
1,350+
$3.35484
Exquisite packaging
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Product details
Experience unparalleled power control with the FGH60T65SHD-F155 single IGBT transistor by onsemi. This high-efficiency component is perfect for applications in industrial automation, renewable energy, and automotive systems. The FGH60T65SHD-F155 boasts low energy loss and high switching frequency, making it a top choice for modern power electronics. Its robust design ensures long-term reliability even under high stress and temperature variations. Whether you're designing for high-power or compact systems, the FGH60T65SHD-F155 offers the flexibility and performance you need. Submit your inquiry online to learn more about this advanced IGBT transistor.
General specs
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 120 A
- Current - Collector Pulsed (Icm): 180 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 60A
- Power - Max: 349 W
- Switching Energy: 1.69mJ (on), 630µJ (off)
- Input Type: Standard
- Gate Charge: 102 nC
- Td (on/off) @ 25°C: 26ns/87ns
- Test Condition: 400V, 60A, 6Ohm, 15V
- Reverse Recovery Time (trr): 34.6 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3