RGT00TS65DGC13
Rohm Semiconductor
Rohm Semiconductor
5US SHORT-CIRCUIT TOLERANCE, 650
$11.30
Available to order
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$11.30000
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$11.187
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$11.074
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$10.961
2000+
$10.848
2500+
$10.735
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RGT00TS65DGC13
$11.30
Product details
Optimize your power electronics with the RGT00TS65DGC13 single IGBT transistor from Rohm Semiconductor. This high-efficiency component is engineered to deliver superior switching performance and thermal management, ensuring long-term reliability in harsh operating conditions. The RGT00TS65DGC13 is perfect for applications requiring precise control and high power handling, such as industrial motor drives, UPS systems, and solar inverters. Its low saturation voltage and fast switching speed minimize energy loss, improving overall system efficiency. Designed for easy integration, this IGBT transistor is a must-have for engineers seeking dependable power solutions. Discover how the RGT00TS65DGC13 can enhance your next project request a quote now.
General specs
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 85 A
- Current - Collector Pulsed (Icm): 150 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
- Power - Max: 277 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 94 nC
- Td (on/off) @ 25°C: 42ns/137ns
- Test Condition: 400V, 50A, 10Ohm, 15V
- Reverse Recovery Time (trr): 54 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247G
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