STGW25S120DF3
STMicroelectronics
STMicroelectronics
IGBT 1200V 25A TO247
$9.08
Available to order
Reference Price (USD)
1+
$9.68000
30+
$8.43300
120+
$7.41242
510+
$6.54300
1,020+
$5.78700
Exquisite packaging
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STGW25S120DF3
$9.08
Product details
The STGW25S120DF3 from STMicroelectronics is a high-performance single IGBT transistor designed for efficient power management in industrial applications. This discrete semiconductor product offers robust switching capabilities and thermal stability, making it ideal for demanding environments. With its advanced design, the STGW25S120DF3 ensures minimal energy loss and enhanced reliability, catering to a wide range of power electronics needs. Whether you're designing motor drives, power supplies, or renewable energy systems, this IGBT transistor delivers consistent performance under varying load conditions. Its compact form factor and ease of integration further simplify your design process. Explore the versatility of the STGW25S120DF3 and elevate your power management solutions today. For pricing and availability, submit an inquiry online.
General specs
- Product Status: Obsolete
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 50 A
- Current - Collector Pulsed (Icm): 100 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
- Power - Max: 375 W
- Switching Energy: 830µJ (on), 2.37mJ (off)
- Input Type: Standard
- Gate Charge: 80 nC
- Td (on/off) @ 25°C: 31ns/147ns
- Test Condition: 600V, 25A, 15Ohm, 15V
- Reverse Recovery Time (trr): 265 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
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