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FDC637BNZ

onsemi
FDC637BNZ Preview
onsemi
MOSFET N-CH 20V 6.2A SUPERSOT6
$0.52
Available to order
Reference Price (USD)
3,000+
$0.11489
6,000+
$0.10793
15,000+
$0.10096
30,000+
$0.09261
75,000+
$0.08913
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FDC637BNZ

FDC637BNZ

$0.52

Product details

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Rds On (Max) @ Id, Vgs: 24mOhm @ 6.2A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
  • Vgs (Max): ±12V
  • Input Capacitance (Ciss) (Max) @ Vds: 895 pF @ 10 V
  • FET Feature: -
  • Power Dissipation (Max): 1.6W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SuperSOT™-6
  • Package / Case: SOT-23-6 Thin, TSOT-23-6

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