P3M12080K4
PN Junction Semiconductor

PN Junction Semiconductor
SICFET N-CH 1200V 47A TO-247-4
$11.90
Available to order
Reference Price (USD)
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$11.90000
500+
$11.781
1000+
$11.662
1500+
$11.543
2000+
$11.424
2500+
$11.305
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Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 47A
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Rds On (Max) @ Id, Vgs: 96mOhm @ 20A, 15V
- Vgs(th) (Max) @ Id: 2.4V @ 5mA (Typ)
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): +21V, -8V
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): 221W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-4L
- Package / Case: TO-247-4