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SI4800BDY-T1-GE3

Vishay Siliconix
SI4800BDY-T1-GE3 Preview
Vishay Siliconix
MOSFET N-CH 30V 6.5A 8SO
$0.96
Available to order
Reference Price (USD)
2,500+
$0.32578
5,000+
$0.30464
12,500+
$0.29407
25,000+
$0.28830
Exquisite packaging
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Vishay Siliconix SI4800BDY-T1-GE3 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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SI4800BDY-T1-GE3

SI4800BDY-T1-GE3

$0.96

Product details

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 18.5mOhm @ 9A, 10V
  • Vgs(th) (Max) @ Id: 1.8V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
  • Vgs (Max): ±25V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • FET Feature: -
  • Power Dissipation (Max): 1.3W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOIC
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)

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