G2R1000MT33J
GeneSiC Semiconductor
GeneSiC Semiconductor
SIC MOSFET N-CH 4A TO263-7
$19.82
Available to order
Reference Price (USD)
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$19.82000
500+
$19.6218
1000+
$19.4236
1500+
$19.2254
2000+
$19.0272
2500+
$18.829
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G2R1000MT33J
$19.82
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 3300 V
- Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2A, 20V
- Vgs(th) (Max) @ Id: 3.5V @ 2mA
- Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 20 V
- Vgs (Max): +20V, -5V
- Input Capacitance (Ciss) (Max) @ Vds: 238 pF @ 1000 V
- FET Feature: -
- Power Dissipation (Max): 74W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263-7
- Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
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