APT50GN60BDQ3G
Microchip Technology

Microchip Technology
IGBT FIELDSTOP COMBI 600V 50A TO
$10.60
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Product details
Maximize power efficiency with the APT50GN60BDQ3G single IGBT transistor by Microchip Technology. This high-quality component is engineered for applications requiring robust switching and thermal stability, such as renewable energy systems, industrial welding machines, and electric vehicle powertrains. The APT50GN60BDQ3G features low switching losses and high current capacity, ensuring reliable performance in demanding conditions. Its compact design and ease of integration make it a favorite among power electronics designers. Whether you're working on large-scale industrial projects or compact consumer electronics, the APT50GN60BDQ3G delivers the performance you need. Get started today by submitting an online inquiry for pricing and availability.
General specs
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 107 A
- Current - Collector Pulsed (Icm): 150 A
- Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 50A
- Power - Max: 366 W
- Switching Energy: 1.185mJ (on), 1.565mJ (off)
- Input Type: Standard
- Gate Charge: 325 nC
- Td (on/off) @ 25°C: 20ns/230ns
- Test Condition: 400V, 50A, 4.3Ohm, 15V
- Reverse Recovery Time (trr): 35 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3