RGTH00TS65GC11
Rohm Semiconductor
Rohm Semiconductor
IGBT 650V 85A 277W TO-247N
$4.75
Available to order
Reference Price (USD)
1+
$3.74000
10+
$3.35600
30+
$3.17267
120+
$2.74950
270+
$2.60852
510+
$2.34061
1,020+
$1.97400
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RGTH00TS65GC11
$4.75
Product details
The RGTH00TS65GC11 from Rohm Semiconductor is a state-of-the-art single IGBT transistor designed for high-power switching applications. This discrete semiconductor product is ideal for use in solar inverters, motor drives, and power distribution systems, offering exceptional efficiency and durability. With its low conduction losses and high thermal conductivity, the RGTH00TS65GC11 ensures reliable operation in extreme environments. Engineers will appreciate its fast switching speed and compatibility with various control circuits. Upgrade your power management solutions with the RGTH00TS65GC11 and achieve superior performance. For more information and to place an order, contact us today.
General specs
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 85 A
- Current - Collector Pulsed (Icm): 200 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
- Power - Max: 277 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 94 nC
- Td (on/off) @ 25°C: 39ns/143ns
- Test Condition: 400V, 50A, 10Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247N
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