STGP6M65DF2
STMicroelectronics
STMicroelectronics
TRENCH GATE FIELD-STOP IGBT M SE
$1.68
Available to order
Reference Price (USD)
1+
$1.18000
10+
$1.05300
100+
$0.82110
500+
$0.67830
2,000+
$0.49980
6,000+
$0.47600
Exquisite packaging
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STGP6M65DF2
$1.68
Product details
Maximize power efficiency with the STGP6M65DF2 single IGBT transistor by STMicroelectronics. This high-quality component is engineered for applications requiring robust switching and thermal stability, such as renewable energy systems, industrial welding machines, and electric vehicle powertrains. The STGP6M65DF2 features low switching losses and high current capacity, ensuring reliable performance in demanding conditions. Its compact design and ease of integration make it a favorite among power electronics designers. Whether you're working on large-scale industrial projects or compact consumer electronics, the STGP6M65DF2 delivers the performance you need. Get started today by submitting an online inquiry for pricing and availability.
General specs
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 12 A
- Current - Collector Pulsed (Icm): 24 A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A
- Power - Max: 88 W
- Switching Energy: 40µJ (on), 136µJ (off)
- Input Type: Standard
- Gate Charge: 21.2 nC
- Td (on/off) @ 25°C: 12ns/86ns
- Test Condition: 400V, 6A, 22Ohm, 15V
- Reverse Recovery Time (trr): 140 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220
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