HGT1S12N60C3R
Harris Corporation
Harris Corporation
24A, 600V N-CHANNEL IGBT
$1.21
Available to order
Reference Price (USD)
1+
$1.21000
500+
$1.1979
1000+
$1.1858
1500+
$1.1737
2000+
$1.1616
2500+
$1.1495
Exquisite packaging
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HGT1S12N60C3R
$1.21
Product details
The HGT1S12N60C3R from Harris Corporation is a high-performance single IGBT transistor designed for efficient power management in industrial applications. This discrete semiconductor product offers robust switching capabilities and thermal stability, making it ideal for demanding environments. With its advanced design, the HGT1S12N60C3R ensures minimal energy loss and enhanced reliability, catering to a wide range of power electronics needs. Whether you're designing motor drives, power supplies, or renewable energy systems, this IGBT transistor delivers consistent performance under varying load conditions. Its compact form factor and ease of integration further simplify your design process. Explore the versatility of the HGT1S12N60C3R and elevate your power management solutions today. For pricing and availability, submit an inquiry online.
General specs
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 24 A
- Current - Collector Pulsed (Icm): 48 A
- Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 12A
- Power - Max: 104 W
- Switching Energy: 400µJ (on), 340µJ (off)
- Input Type: Standard
- Gate Charge: 71 nC
- Td (on/off) @ 25°C: 37ns/120ns
- Test Condition: 480V, 12A, 25Ohm, 15V
- Reverse Recovery Time (trr): 37 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
- Supplier Device Package: I2PAK (TO-262)
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