IXA30PG1200DHG-TUB
IXYS
IXYS
IGBT H BRIDGE 1200V 43A SMPD
$16.28
Available to order
Reference Price (USD)
1+
$16.27900
500+
$16.11621
1000+
$15.95342
1500+
$15.79063
2000+
$15.62784
2500+
$15.46505
Exquisite packaging
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IXYS IXA30PG1200DHG-TUB is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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IXA30PG1200DHG-TUB
$16.28
Product details
IXYS presents the IXA30PG1200DHG-TUB, a high-reliability IGBT array designed for critical power electronics applications. This Discrete Semiconductor Product excels in high-frequency switching scenarios with its optimized gate structure and low switching losses. The array configuration provides design flexibility while maintaining synchronized operation across all units. Key characteristics include positive temperature coefficient for easy paralleling, robust short-circuit capability, and minimal leakage current. These features make it ideal for electric vehicle drivetrains, industrial laser systems, and high-voltage DC transmission. The renewable energy sector frequently specifies similar IGBT arrays for photovoltaic inverters. The IXA30PG1200DHG-TUB demonstrates IXYS's commitment to energy-efficient power solutions. Our technical support team is ready to assist with your application requirements - inquire now about availability and volume pricing for this advanced transistor array.
General specs
- Product Status: Active
- IGBT Type: PT
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 43 A
- Power - Max: 150 W
- Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 25A
- Current - Collector Cutoff (Max): 2.1 mA
- Input Capacitance (Cies) @ Vce: -
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 9-SMD Module
- Supplier Device Package: ISOPLUS-SMPD™.B
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