IKW50N65ES5XKSA1
Infineon Technologies

Infineon Technologies
IGBT TRENCH 650V 80A TO247-3
$6.12
Available to order
Reference Price (USD)
1+
$6.32000
10+
$5.72000
240+
$4.76004
720+
$4.11226
1,200+
$3.53148
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Infineon Technologies IKW50N65ES5XKSA1 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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Product details
The IKW50N65ES5XKSA1 from Infineon Technologies is a state-of-the-art single IGBT transistor designed for high-power switching applications. This discrete semiconductor product is ideal for use in solar inverters, motor drives, and power distribution systems, offering exceptional efficiency and durability. With its low conduction losses and high thermal conductivity, the IKW50N65ES5XKSA1 ensures reliable operation in extreme environments. Engineers will appreciate its fast switching speed and compatibility with various control circuits. Upgrade your power management solutions with the IKW50N65ES5XKSA1 and achieve superior performance. For more information and to place an order, contact us today.
General specs
- Product Status: Active
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 80 A
- Current - Collector Pulsed (Icm): 200 A
- Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 50A
- Power - Max: 274 W
- Switching Energy: 1.23mJ (on), 550µJ (off)
- Input Type: Standard
- Gate Charge: 120 nC
- Td (on/off) @ 25°C: 20ns/127ns
- Test Condition: 400V, 50A, 8.2Ohm, 15V
- Reverse Recovery Time (trr): 70 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3