IGB20N60H3ATMA1
Infineon Technologies
Infineon Technologies
IGBT TRENCH/FS 600V 40A D2PAK
$1.39
Available to order
Reference Price (USD)
1,000+
$1.20628
2,000+
$1.12309
5,000+
$1.10922
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Infineon Technologies IGB20N60H3ATMA1 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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IGB20N60H3ATMA1
$1.39
Product details
The IGB20N60H3ATMA1 from Infineon Technologies is a state-of-the-art single IGBT transistor designed for high-power switching applications. This discrete semiconductor product is ideal for use in solar inverters, motor drives, and power distribution systems, offering exceptional efficiency and durability. With its low conduction losses and high thermal conductivity, the IGB20N60H3ATMA1 ensures reliable operation in extreme environments. Engineers will appreciate its fast switching speed and compatibility with various control circuits. Upgrade your power management solutions with the IGB20N60H3ATMA1 and achieve superior performance. For more information and to place an order, contact us today.
General specs
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 40 A
- Current - Collector Pulsed (Icm): 80 A
- Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A
- Power - Max: 170 W
- Switching Energy: 690µJ
- Input Type: Standard
- Gate Charge: 120 nC
- Td (on/off) @ 25°C: 16ns/194ns
- Test Condition: 400V, 20A, 14.6Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: PG-TO263-3
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