FGHL50T65SQDT
onsemi
onsemi
IGBT, 650 V, 50 A FIELD STOP TRE
$6.78
Available to order
Reference Price (USD)
1+
$6.78000
500+
$6.7122
1000+
$6.6444
1500+
$6.5766
2000+
$6.5088
2500+
$6.441
Exquisite packaging
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FGHL50T65SQDT
$6.78
Product details
Enhance your power control systems with the FGHL50T65SQDT single IGBT transistor from onsemi. This high-performance component is tailored for applications demanding efficient energy conversion and minimal heat generation. The FGHL50T65SQDT is widely used in wind turbine inverters, HVAC systems, and medical power supplies, thanks to its exceptional reliability and fast response times. Its advanced architecture ensures low conduction losses and high switching frequencies, making it a top choice for modern power electronics. Whether you're upgrading existing systems or designing new ones, the FGHL50T65SQDT offers the flexibility and performance you need. Submit your inquiry online to learn more about this versatile IGBT transistor.
General specs
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 100 A
- Current - Collector Pulsed (Icm): 200 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
- Power - Max: 268 W
- Switching Energy: 223µJ (on), 91.13µJ (off)
- Input Type: Standard
- Gate Charge: 99.7 nC
- Td (on/off) @ 25°C: 22.8ns/70ns
- Test Condition: 400V, 12.5A, 4.7Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
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