HGT1S12N60C3
Harris Corporation
Harris Corporation
27A, 600V, UFS N-CHANNEL IGBT
$1.42
Available to order
Reference Price (USD)
1+
$1.42000
500+
$1.4058
1000+
$1.3916
1500+
$1.3774
2000+
$1.3632
2500+
$1.349
Exquisite packaging
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HGT1S12N60C3
$1.42
Product details
Optimize your power electronics with the HGT1S12N60C3 single IGBT transistor from Harris Corporation. This high-efficiency component is engineered to deliver superior switching performance and thermal management, ensuring long-term reliability in harsh operating conditions. The HGT1S12N60C3 is perfect for applications requiring precise control and high power handling, such as industrial motor drives, UPS systems, and solar inverters. Its low saturation voltage and fast switching speed minimize energy loss, improving overall system efficiency. Designed for easy integration, this IGBT transistor is a must-have for engineers seeking dependable power solutions. Discover how the HGT1S12N60C3 can enhance your next project request a quote now.
General specs
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 24 A
- Current - Collector Pulsed (Icm): 96 A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 12A
- Power - Max: 104 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 62 nC
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
- Supplier Device Package: I2PAK (TO-262)
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