SGW13N60UFDTM
Fairchild Semiconductor

Fairchild Semiconductor
N-CHANNEL IGBT
$1.71
Available to order
Reference Price (USD)
1+
$1.71000
500+
$1.6929
1000+
$1.6758
1500+
$1.6587
2000+
$1.6416
2500+
$1.6245
Exquisite packaging
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Product details
Experience unparalleled power control with the SGW13N60UFDTM single IGBT transistor by Fairchild Semiconductor. This high-efficiency component is perfect for applications in industrial automation, renewable energy, and automotive systems. The SGW13N60UFDTM boasts low energy loss and high switching frequency, making it a top choice for modern power electronics. Its robust design ensures long-term reliability even under high stress and temperature variations. Whether you're designing for high-power or compact systems, the SGW13N60UFDTM offers the flexibility and performance you need. Submit your inquiry online to learn more about this advanced IGBT transistor.
General specs
- Product Status: Obsolete
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 13 A
- Current - Collector Pulsed (Icm): 52 A
- Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 6.5A
- Power - Max: 60 W
- Switching Energy: 85µJ (on), 95µJ (off)
- Input Type: Standard
- Gate Charge: 25 nC
- Td (on/off) @ 25°C: 20ns/70ns
- Test Condition: 300V, 6.5A, 50Ohm, 15V
- Reverse Recovery Time (trr): 55 ns
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: D2PAK (TO-263)