NGTB60N60SWG
onsemi
onsemi
IGBT 600V 120A 298W TO247
$3.20
Available to order
Reference Price (USD)
1+
$3.20000
500+
$3.168
1000+
$3.136
1500+
$3.104
2000+
$3.072
2500+
$3.04
Exquisite packaging
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NGTB60N60SWG
$3.20
Product details
The NGTB60N60SWG from onsemi is a high-performance single IGBT transistor designed for efficient power management in industrial applications. This discrete semiconductor product offers robust switching capabilities and thermal stability, making it ideal for demanding environments. With its advanced design, the NGTB60N60SWG ensures minimal energy loss and enhanced reliability, catering to a wide range of power electronics needs. Whether you're designing motor drives, power supplies, or renewable energy systems, this IGBT transistor delivers consistent performance under varying load conditions. Its compact form factor and ease of integration further simplify your design process. Explore the versatility of the NGTB60N60SWG and elevate your power management solutions today. For pricing and availability, submit an inquiry online.
General specs
- Product Status: Obsolete
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 120 A
- Current - Collector Pulsed (Icm): 240 A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 60A
- Power - Max: 298 W
- Switching Energy: 1.41mJ (on), 600µJ (off)
- Input Type: Standard
- Gate Charge: 173 nC
- Td (on/off) @ 25°C: 87ns/180ns
- Test Condition: 400V, 60A, 10Ohm, 15V
- Reverse Recovery Time (trr): 76 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
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