IGD01N120H2BUMA1
Infineon Technologies
Infineon Technologies
IGBT 1200V 3.2A 28W TO252-3
$0.59
Available to order
Reference Price (USD)
2,500+
$0.61872
Exquisite packaging
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IGD01N120H2BUMA1
$0.59
Product details
Optimize your power electronics with the IGD01N120H2BUMA1 single IGBT transistor from Infineon Technologies. This high-efficiency component is engineered to deliver superior switching performance and thermal management, ensuring long-term reliability in harsh operating conditions. The IGD01N120H2BUMA1 is perfect for applications requiring precise control and high power handling, such as industrial motor drives, UPS systems, and solar inverters. Its low saturation voltage and fast switching speed minimize energy loss, improving overall system efficiency. Designed for easy integration, this IGBT transistor is a must-have for engineers seeking dependable power solutions. Discover how the IGD01N120H2BUMA1 can enhance your next project request a quote now.
General specs
- Product Status: Last Time Buy
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 3.2 A
- Current - Collector Pulsed (Icm): 3.5 A
- Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 1A
- Power - Max: 28 W
- Switching Energy: 140µJ
- Input Type: Standard
- Gate Charge: 8.6 nC
- Td (on/off) @ 25°C: 13ns/370ns
- Test Condition: 800V, 1A, 241Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: PG-TO252-3-11
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