RGWSX2TS65GC13
Rohm Semiconductor

Rohm Semiconductor
HIGH-SPEED FAST SWITCHING TYPE,
$6.84
Available to order
Reference Price (USD)
1+
$6.84000
500+
$6.7716
1000+
$6.7032
1500+
$6.6348
2000+
$6.5664
2500+
$6.498
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Product details
The RGWSX2TS65GC13 from Rohm Semiconductor is a premium single IGBT transistor designed for high-efficiency power switching. This discrete semiconductor product is perfect for applications in traction systems, uninterruptible power supplies, and industrial motor controls. With its superior thermal performance and low on-state voltage, the RGWSX2TS65GC13 ensures optimal energy savings and extended operational life. Its rugged design withstands high current and voltage stresses, making it a reliable choice for critical power management tasks. Engineers will find its compatibility with various gate drivers a significant advantage. Discover the benefits of the RGWSX2TS65GC13 for your next project request a quote today.
General specs
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 104 A
- Current - Collector Pulsed (Icm): 180 A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 60A
- Power - Max: 288 W
- Switching Energy: 1.43mJ (on), 1.2mJ (off)
- Input Type: Standard
- Gate Charge: 140 nC
- Td (on/off) @ 25°C: 55ns/180ns
- Test Condition: 400V, 60A, 10Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247G