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SQJ204EP-T1_GE3

Vishay Siliconix
SQJ204EP-T1_GE3 Preview
Vishay Siliconix
MOSFET DUAL N-CH 12V PPAK SO-8L
$1.55
Available to order
Reference Price (USD)
3,000+
$0.58056
6,000+
$0.55330
15,000+
$0.53383
Exquisite packaging
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Vishay Siliconix SQJ204EP-T1_GE3 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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SQJ204EP-T1_GE3

SQJ204EP-T1_GE3

$1.55

Product details

Optimize your electronic designs with the SQJ204EP-T1_GE3 MOSFET array from Vishay Siliconix, a standout in the Discrete Semiconductor Products category. This transistor array, part of the Transistors - FETs, MOSFETs - Arrays subcategory, delivers superior performance in power switching applications. Its compact design and high efficiency make it a preferred choice for engineers seeking reliable solutions.\n\nThe SQJ204EP-T1_GE3 boasts features such as low gate drive requirements, high current handling capacity, and minimal switching losses. The array format provides multiple FETs in one package, streamlining PCB layout and reducing component count. Enhanced thermal management ensures stable operation even under high load conditions.\n\nApplications for the SQJ204EP-T1_GE3 include industrial automation, renewable energy systems, and automotive electronics. In industrial automation, it drives actuators and sensors with precision. Renewable energy systems leverage its efficiency for solar inverters and wind turbine controls. Automotive electronics benefit from its durability and performance in harsh conditions.\n\nInterested in the SQJ204EP-T1_GE3? Contact us for a quote and discover how this MOSFET array can enhance your designs. Our experts are ready to support your technical and purchasing requirements.

General specs

  • Product Status: Active
  • FET Type: 2 N-Channel (Dual) Asymmetrical
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 60A (Tc)
  • Rds On (Max) @ Id, Vgs: 8.3mOhm @ 4A, 10V, 3mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, 50nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 6V, 3700pF @ 6V
  • Power - Max: 27W (Tc), 48W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK® SO-8 Dual
  • Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric

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