MSCSM120HM16CT3AG
Microchip Technology
Microchip Technology
PM-MOSFET-SIC-SBD~-SP3F
$529.47
Available to order
Reference Price (USD)
1+
$529.47000
500+
$524.1753
1000+
$518.8806
1500+
$513.5859
2000+
$508.2912
2500+
$502.9965
Exquisite packaging
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MSCSM120HM16CT3AG
$529.47
Product details
General specs
- Product Status: Active
- FET Type: 4 N-Channel
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 173A (Tc)
- Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V
- Vgs(th) (Max) @ Id: 2.8V @ 2mA
- Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V
- Power - Max: 745W (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: SP3F
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