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BSG0811NDATMA1

Infineon Technologies
BSG0811NDATMA1 Preview
Infineon Technologies
MOSFET 2N-CH 25V 19A/41A 8TISON
$3.26
Available to order
Reference Price (USD)
5,000+
$1.03961
Exquisite packaging
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EMS 3-7 days

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BSG0811NDATMA1

BSG0811NDATMA1

$3.26

Product details

General specs

  • Product Status: Active
  • FET Type: 2 N-Channel (Dual) Asymmetrical
  • FET Feature: Logic Level Gate, 4.5V Drive
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 19A, 41A
  • Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 12V
  • Power - Max: 2.5W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: PG-TISON-8

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