Shopping cart

Subtotal: $0.00

SI8489EDB-T2-E1

Vishay Siliconix
SI8489EDB-T2-E1 Preview
Vishay Siliconix
MOSFET P-CH 20V 4MICROFOOT
$0.49
Available to order
Reference Price (USD)
3,000+
$0.18519
6,000+
$0.17391
15,000+
$0.16262
30,000+
$0.15472
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

Vishay Siliconix SI8489EDB-T2-E1 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
SI8489EDB-T2-E1

SI8489EDB-T2-E1

$0.49

Product details

Vishay Siliconix presents the SI8489EDB-T2-E1, a high-efficiency single MOSFET transistor that excels in the Discrete Semiconductor Products category (Transistors - FETs, MOSFETs - Single). This component combines innovative semiconductor technology with practical design features to deliver superior performance in power management applications. The SI8489EDB-T2-E1 offers significant advantages including optimized switching behavior, reduced conduction losses, and enhanced thermal performance. These characteristics translate to improved system efficiency and reliability in your electronic designs. The MOSFET is particularly effective in medical imaging equipment, laboratory instrumentation, and diagnostic devices where precision power control is essential. Industrial applications benefit from its use in CNC machinery, packaging systems, and material handling equipment. For the energy sector, it's ideal for smart grid components and power monitoring systems. The SI8489EDB-T2-E1 also performs exceptionally in professional lighting systems and advanced HVAC controls. With its robust construction and electrical efficiency, this component provides design engineers with a reliable solution for diverse power switching requirements. Interested in incorporating this high-performance MOSFET into your designs? Submit your inquiry through our online platform to receive comprehensive product details, technical support, and competitive pricing information from our expert team.

General specs

  • Product Status: Active
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 3.06A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
  • Rds On (Max) @ Id, Vgs: 44mOhm @ 1.5A, 10V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
  • Vgs (Max): ±12V
  • Input Capacitance (Ciss) (Max) @ Vds: 765 pF @ 10 V
  • FET Feature: -
  • Power Dissipation (Max): 780mW (Ta), 1.8W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 4-Microfoot
  • Package / Case: 4-UFBGA

Viewed products

onsemi

NTS4101PT1G

$0.00 (not set)
Vishay Siliconix

SIR188LDP-T1-RE3

$0.00 (not set)
STMicroelectronics

STF10LN80K5

$0.00 (not set)
NXP USA Inc.

BUK6217-55C,118

$0.00 (not set)
Renesas Electronics America Inc

2SK3305-S-AZ

$0.00 (not set)
Vishay Siliconix

SIS862DN-T1-GE3

$0.00 (not set)
Vishay Siliconix

IRLI640GPBF

$0.00 (not set)
Microchip Technology

APT7M120S

$0.00 (not set)
onsemi

NTBGS004N10G

$0.00 (not set)
IXYS

IXFP56N30X3M

$0.00 (not set)
Top