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BUK6217-55C,118

NXP USA Inc.
BUK6217-55C,118 Preview
NXP USA Inc.
MOSFET N-CH 55V 44A DPAK
$0.26
Available to order
Reference Price (USD)
2,500+
$0.35808
Exquisite packaging
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NXP USA Inc. BUK6217-55C,118 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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BUK6217-55C,118

BUK6217-55C,118

$0.26

Product details

Enhance your electronic designs with the BUK6217-55C,118 single MOSFET transistor from NXP USA Inc., a premium Discrete Semiconductor Product in the Transistors - FETs, MOSFETs - Single classification. This power-efficient component excels in switching applications, delivering robust performance with minimal energy loss. The BUK6217-55C,118 features an optimized gate drive characteristic that ensures smooth operation across various voltage ranges. Its compact design doesn't compromise on power handling capabilities, making it suitable for space-constrained applications. Notable advantages include superior noise immunity, stable operation under varying load conditions, and enhanced electrostatic discharge protection. These qualities make the BUK6217-55C,118 particularly valuable for medical equipment, telecommunications infrastructure, and aerospace electronics. Implement this MOSFET in your next project involving DC-DC converters, load switches, or power distribution systems. The component's reliability and efficiency will significantly improve your system's overall performance. For engineers seeking quality MOSFET solutions, the BUK6217-55C,118 represents an excellent choice. Visit our website to request a quote or submit your inquiry directly through our online portal for prompt assistance.

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55 V
  • Current - Continuous Drain (Id) @ 25°C: 44A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Rds On (Max) @ Id, Vgs: 19mOhm @ 12A, 10V
  • Vgs(th) (Max) @ Id: 2.8V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 33.8 nC @ 10 V
  • Vgs (Max): ±16V
  • Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 80W (Ta)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

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