IRLI640GPBF
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 200V 9.9A TO220-3
$3.50
Available to order
Reference Price (USD)
1+
$3.63000
50+
$2.94400
100+
$2.69240
500+
$2.20200
1,000+
$1.87501
2,500+
$1.78698
5,000+
$1.72410
Exquisite packaging
Discount
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IRLI640GPBF
$3.50
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 9.9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
- Rds On (Max) @ Id, Vgs: 180mOhm @ 5.9A, 5V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
- Vgs (Max): ±10V
- Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 40W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3 Full Pack, Isolated Tab
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