RN1909,LF(CT
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
NPNX2 BRT Q1BSR47KOHM Q1BER22KOH
$0.26
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RN1909,LF(CT
$0.26
Product details
The RN1909,LF(CT by Toshiba Semiconductor and Storage is a cutting-edge pre-biased bipolar junction transistor (BJT) array, part of the Discrete Semiconductor Products family under Transistors - Bipolar (BJT) - Arrays, Pre-Biased. This product is designed to meet the needs of modern electronics, offering high efficiency and reliability. The RN1909,LF(CT features integrated pre-biasing, which streamlines circuit design and reduces component count. Its excellent thermal performance ensures consistent operation even in challenging environments. This BJT array is perfect for applications such as motor control, LED drivers, and power supplies. The RN1909,LF(CT provides high gain and low saturation voltage, making it ideal for precision tasks. It is also widely used in renewable energy systems, robotics, and IoT devices. The compact and robust design of the RN1909,LF(CT makes it suitable for both industrial and consumer applications. For engineers looking for a dependable and high-performance transistor array, the RN1909,LF(CT is an excellent choice. Submit your inquiry now to get detailed information on pricing and delivery options tailored to your needs.
General specs
- Product Status: Active
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 47kOhms
- Resistor - Emitter Base (R2): 22kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: US6
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