RN1909,LF(CT
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
NPNX2 BRT Q1BSR47KOHM Q1BER22KOH
$0.26
Available to order
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$0.2574
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$0.2548
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$0.2522
2000+
$0.2496
2500+
$0.247
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RN1909,LF(CT
$0.26
Product details
General specs
- Product Status: Active
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 47kOhms
- Resistor - Emitter Base (R2): 22kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: US6
