PQMD16Z
Nexperia USA Inc.
Nexperia USA Inc.
TRANS PREBIAS 1NPN 1PNP 50V 6DFN
$0.06
Available to order
Reference Price (USD)
5,000+
$0.06188
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
| DHL / Fedex / UPS | 2-5 days |
| TNT | 2-6 days |
| EMS | 3-7 days |
Nexperia USA Inc. PQMD16Z is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
PQMD16Z
$0.06
Product details
The PQMD16Z by Nexperia USA Inc. is a cutting-edge pre-biased bipolar junction transistor (BJT) array, part of the Discrete Semiconductor Products family under Transistors - Bipolar (BJT) - Arrays, Pre-Biased. This product is designed to meet the needs of modern electronics, offering high efficiency and reliability. The PQMD16Z features integrated pre-biasing, which streamlines circuit design and reduces component count. Its excellent thermal performance ensures consistent operation even in challenging environments. This BJT array is perfect for applications such as motor control, LED drivers, and power supplies. The PQMD16Z provides high gain and low saturation voltage, making it ideal for precision tasks. It is also widely used in renewable energy systems, robotics, and IoT devices. The compact and robust design of the PQMD16Z makes it suitable for both industrial and consumer applications. For engineers looking for a dependable and high-performance transistor array, the PQMD16Z is an excellent choice. Submit your inquiry now to get detailed information on pricing and delivery options tailored to your needs.
General specs
- Product Status: Active
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 22kOhms
- Resistor - Emitter Base (R2): 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 1µA
- Frequency - Transition: 230MHz, 180MHz
- Power - Max: 350mW
- Mounting Type: Surface Mount
- Package / Case: 6-XFDFN Exposed Pad
- Supplier Device Package: DFN1010B-6
Viewed products
