Shopping cart

Subtotal: $0.00

MUN5335DW1T2G

onsemi
MUN5335DW1T2G Preview
onsemi
TRANS NPN/PNP PREBIAS 0.25W SC88
$0.04
Available to order
Reference Price (USD)
3,000+
$0.04760
6,000+
$0.04161
15,000+
$0.03563
30,000+
$0.03363
75,000+
$0.03164
150,000+
$0.02831
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

onsemi MUN5335DW1T2G is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
MUN5335DW1T2G

MUN5335DW1T2G

$0.04

Product details

The MUN5335DW1T2G from onsemi is a high-performance pre-biased bipolar junction transistor (BJT) array designed for efficient switching and amplification applications. This product is part of the Discrete Semiconductor Products category, specifically tailored for Transistors - Bipolar (BJT) - Arrays, Pre-Biased. It offers excellent thermal stability and consistent performance, making it ideal for various electronic circuits. The MUN5335DW1T2G ensures reliable operation in compact designs, providing engineers with a versatile solution for their projects. With its robust construction and advanced technology, this BJT array is a must-have for modern electronics. Key features include integrated pre-biasing for simplified circuit design, low power consumption, and high gain. These transistors are perfect for applications requiring precise control and signal amplification. The MUN5335DW1T2G is widely used in automotive electronics, industrial control systems, and consumer electronics. Its compact form factor and high reliability make it suitable for space-constrained applications. For pricing and availability, submit an inquiry today and let our team assist you with your specific requirements.

General specs

  • Product Status: Active
  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 2.2kOhms
  • Resistor - Emitter Base (R2): 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: -
  • Power - Max: 250mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-88/SC70-6/SOT-363

Viewed products

Nexperia USA Inc.

NHUMH11F

$0.00 (not set)
Nexperia USA Inc.

PQMD16Z

$0.00 (not set)
Diodes Incorporated

DDC114YUQ-13-F

$0.00 (not set)
onsemi

NSVMUN5336DW1T1G

$0.00 (not set)
Toshiba Semiconductor and Storage

RN4983FE,LXHF(CT

$0.00 (not set)
onsemi

NSBA143TDXV6T5G

$0.00 (not set)
onsemi

MUN5331DW1T1G

$0.00 (not set)
Panasonic Electronic Components

UP0431100L

$0.00 (not set)
Toshiba Semiconductor and Storage

RN2502(TE85L,F)

$0.00 (not set)
Rohm Semiconductor

EMD9T2R

$0.00 (not set)
Top