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RN1710JE(TE85L,F)

Toshiba Semiconductor and Storage
RN1710JE(TE85L,F) Preview
Toshiba Semiconductor and Storage
NPN X 2 BRT Q1BSR=4.7KOHM Q1BER=
$0.41
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$0.3936
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RN1710JE(TE85L,F)

RN1710JE(TE85L,F)

$0.41

Product details

General specs

  • Product Status: Active
  • Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 4.7kOhms
  • Resistor - Emitter Base (R2): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 250MHz
  • Power - Max: 100mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-553
  • Supplier Device Package: ESV

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