RN1710JE(TE85L,F)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
NPN X 2 BRT Q1BSR=4.7KOHM Q1BER=
$0.41
Available to order
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RN1710JE(TE85L,F)
$0.41
Product details
The RN1710JE(TE85L,F) by Toshiba Semiconductor and Storage is a high-quality pre-biased bipolar junction transistor (BJT) array, categorized under Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays, Pre-Biased. This product is designed to provide exceptional performance in various electronic applications, ensuring reliability and efficiency. The RN1710JE(TE85L,F) features integrated pre-biasing, which minimizes external components and simplifies design. Its excellent thermal stability guarantees consistent operation under diverse conditions. This BJT array is ideal for applications such as signal amplification, load switching, and interface circuits. The RN1710JE(TE85L,F) is also widely used in industrial automation, consumer electronics, and telecommunications. With its high gain and low noise performance, it is perfect for sensitive and precision-driven tasks. The compact and durable design of the RN1710JE(TE85L,F) makes it suitable for both high-volume and specialized applications. Engineers and designers can rely on this transistor array for its consistent quality and performance. For more information on the RN1710JE(TE85L,F) and to receive a customized quote, please submit an inquiry and our team will respond promptly.
General specs
- Product Status: Active
- Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 4.7kOhms
- Resistor - Emitter Base (R2): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 250MHz
- Power - Max: 100mW
- Mounting Type: Surface Mount
- Package / Case: SOT-553
- Supplier Device Package: ESV
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