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RN2506(TE85L,F)

Toshiba Semiconductor and Storage
RN2506(TE85L,F) Preview
Toshiba Semiconductor and Storage
TRANS 2PNP PREBIAS 0.3W SMV
$0.36
Available to order
Reference Price (USD)
3,000+
$0.03864
6,000+
$0.03360
15,000+
$0.02856
30,000+
$0.02688
75,000+
$0.02520
150,000+
$0.02240
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Toshiba Semiconductor and Storage RN2506(TE85L,F) is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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RN2506(TE85L,F)

RN2506(TE85L,F)

$0.36

Product details

The RN2506(TE85L,F) by Toshiba Semiconductor and Storage is a high-performance pre-biased bipolar junction transistor (BJT) array, categorized under Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays, Pre-Biased. This product is engineered to excel in a variety of electronic applications, ensuring reliability and efficiency. The RN2506(TE85L,F) features integrated pre-biasing, reducing the need for external components and streamlining design. Its outstanding thermal stability guarantees consistent operation under different conditions. This BJT array is ideal for signal amplification, load switching, and interface circuits. The RN2506(TE85L,F) is also widely used in industrial automation, consumer electronics, and telecommunication systems. With its high gain and low noise characteristics, it is perfect for precision and sensitive applications. The compact and robust design of the RN2506(TE85L,F) makes it suitable for both mass production and specialized projects. Engineers and designers can trust this transistor array for its consistent quality and performance. For more details on the RN2506(TE85L,F) and to obtain a personalized quote, please submit an inquiry and our team will assist you promptly.

General specs

  • Product Status: Active
  • Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 4.7kOhms
  • Resistor - Emitter Base (R2): 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 200MHz
  • Power - Max: 300mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-74A, SOT-753
  • Supplier Device Package: SMV

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