NSVB123JPDXV6T1G
onsemi
onsemi
TRANS PREBIAS NPN/PNP SOT563
$0.08
Available to order
Reference Price (USD)
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$0.08000
500+
$0.0792
1000+
$0.0784
1500+
$0.0776
2000+
$0.0768
2500+
$0.076
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NSVB123JPDXV6T1G
$0.08
Product details
Discover the NSVB123JPDXV6T1G from onsemi, a top-tier pre-biased bipolar junction transistor (BJT) array in the Discrete Semiconductor Products category, specifically Transistors - Bipolar (BJT) - Arrays, Pre-Biased. This product is engineered for optimal performance in amplification and switching applications, offering high reliability and efficiency. The NSVB123JPDXV6T1G features built-in pre-biasing, which simplifies circuit design and enhances performance. Its superior thermal characteristics ensure stable operation across a wide temperature range. Ideal for use in automotive control modules, audio equipment, and power management systems, the NSVB123JPDXV6T1G delivers consistent and precise results. The transistor array is also commonly found in aerospace electronics, security systems, and wearable technology. With its high gain and low power consumption, the NSVB123JPDXV6T1G is perfect for energy-sensitive applications. The robust construction and long-term durability of this BJT array make it a smart investment for any project. To explore how the NSVB123JPDXV6T1G can meet your specific requirements, request a quote today and our experts will assist you promptly.
General specs
- Product Status: Obsolete
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 2.2kOhms
- Resistor - Emitter Base (R2): 4.7kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 500mW
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-563
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