TSM4ND65CI
Taiwan Semiconductor Corporation
Taiwan Semiconductor Corporation
MOSFET N-CH 650V 4A ITO220
$1.19
Available to order
Reference Price (USD)
1+
$1.14000
50+
$0.91500
100+
$0.80070
500+
$0.62092
1,000+
$0.49020
2,500+
$0.45752
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TSM4ND65CI
$1.19
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 2.6Ohm @ 1.2A, 10V
- Vgs(th) (Max) @ Id: 3.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 16.8 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 596 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 41.6W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: ITO-220
- Package / Case: TO-220-3 Full Pack, Isolated Tab
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