IRFI620GPBF
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 200V 4.1A TO220-3
$1.83
Available to order
Reference Price (USD)
1+
$1.79000
50+
$1.43400
100+
$1.25480
500+
$0.97310
1,000+
$0.76824
2,500+
$0.71702
5,000+
$0.68117
Exquisite packaging
Discount
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| EMS | 3-7 days |
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IRFI620GPBF
$1.83
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 800mOhm @ 2.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 30W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3 Full Pack, Isolated Tab
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