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BSZ0909NSATMA1

Infineon Technologies
BSZ0909NSATMA1 Preview
Infineon Technologies
MOSFET N-CH 34V 9A/36A 8TSDSON
$0.85
Available to order
Reference Price (USD)
5,000+
$0.23211
10,000+
$0.22351
25,000+
$0.21882
Exquisite packaging
Discount
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DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

Infineon Technologies BSZ0909NSATMA1 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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BSZ0909NSATMA1

BSZ0909NSATMA1

$0.85

Product details

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 34 V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 36A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1310 pF @ 15 V
  • FET Feature: -
  • Power Dissipation (Max): 2.1W (Ta), 25W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TSDSON-8
  • Package / Case: 8-PowerTDFN

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