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TSM080NB03CR RLG

Taiwan Semiconductor Corporation
TSM080NB03CR RLG Preview
Taiwan Semiconductor Corporation
MOSFET N-CH 30V 14A/59A 8PDFN
$0.64
Available to order
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$0.636174
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$0.629748
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$0.616896
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$0.61047
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TSM080NB03CR RLG

TSM080NB03CR RLG

$0.64

Product details

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 59A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 8mOhm @ 14A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1097 pF @ 15 V
  • FET Feature: -
  • Power Dissipation (Max): 3.1W (Ta), 55.6W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-PDFN (5x6)
  • Package / Case: 8-PowerTDFN

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