SCT4045DEHRC11
Rohm Semiconductor
Rohm Semiconductor
750V, 34A, 3-PIN THD, TRENCH-STR
$15.87
Available to order
Reference Price (USD)
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$15.87000
500+
$15.7113
1000+
$15.5526
1500+
$15.3939
2000+
$15.2352
2500+
$15.0765
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SCT4045DEHRC11
$15.87
Product details
Rohm Semiconductor's SCT4045DEHRC11 stands out in the Discrete Semiconductor Products market as a top-tier single MOSFET transistor in the Transistors - FETs, MOSFETs - Single segment. This component combines cutting-edge semiconductor technology with practical design features for superior electrical performance. The SCT4045DEHRC11 demonstrates exceptional characteristics including low gate charge, excellent switching behavior, and reliable overcurrent protection. These features translate to reduced power losses and extended device lifespan in your applications. The transistor's robust construction ensures stable operation in challenging environmental conditions, from temperature extremes to mechanical stress. Industrial engineers will appreciate its versatility in robotics control systems, welding equipment, and power tool applications. For consumer electronics, it's perfect for high-end audio systems, gaming consoles, and smart home devices. The SCT4045DEHRC11 also performs exceptionally in renewable energy applications such as solar inverters and wind turbine controls. With its balanced performance metrics, this MOSFET provides the ideal solution for your power management needs. Ready to incorporate this high-quality component into your designs? Submit your inquiry through our user-friendly online platform for quick response and competitive pricing options.
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: SiC (Silicon Carbide Junction Transistor)
- Drain to Source Voltage (Vdss): 750 V
- Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Rds On (Max) @ Id, Vgs: 59mOhm @ 17A, 18V
- Vgs(th) (Max) @ Id: 4.8V @ 8.89mA
- Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 18 V
- Vgs (Max): +21V, -4V
- Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 500 V
- FET Feature: -
- Power Dissipation (Max): 115W
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247N
- Package / Case: TO-247-3
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