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SCT4045DRHRC15

Rohm Semiconductor
SCT4045DRHRC15 Preview
Rohm Semiconductor
750V, 34A, 4-PIN THD, TRENCH-STR
$15.87
Available to order
Reference Price (USD)
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$15.87000
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$15.7113
1000+
$15.5526
1500+
$15.3939
2000+
$15.2352
2500+
$15.0765
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SCT4045DRHRC15

SCT4045DRHRC15

$15.87

Product details

The SCT4045DRHRC15 single MOSFET transistor from Rohm Semiconductor represents excellence in the Discrete Semiconductor Products category (Transistors - FETs, MOSFETs - Single). This high-efficiency component is engineered to meet the evolving demands of modern power electronics, offering superior switching performance and reliability. Key features of the SCT4045DRHRC15 include optimized gate drive characteristics, low conduction resistance, and excellent thermal properties. These attributes contribute to reduced power losses and improved system efficiency in various applications. The MOSFET performs exceptionally in agricultural automation systems, construction equipment electronics, and marine power systems. For consumer applications, it's ideal for high-performance kitchen appliances, personal care devices, and home entertainment systems. The component also excels in security system power management and emergency lighting applications. With its robust design and electrical efficiency, the SCT4045DRHRC15 provides design engineers with a reliable solution for diverse power control needs. Whether you're developing new products or upgrading existing systems, this MOSFET offers the performance and durability you require. Ready to explore how the SCT4045DRHRC15 can enhance your designs? Submit your inquiry through our online portal to receive prompt assistance from our technical sales team, including detailed specifications and competitive pricing information.

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: SiC (Silicon Carbide Junction Transistor)
  • Drain to Source Voltage (Vdss): 750 V
  • Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 18V
  • Rds On (Max) @ Id, Vgs: 59mOhm @ 17A, 18V
  • Vgs(th) (Max) @ Id: 4.8V @ 8.89mA
  • Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 18 V
  • Vgs (Max): +21V, -4V
  • Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 500 V
  • FET Feature: -
  • Power Dissipation (Max): 115W
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-4L
  • Package / Case: TO-247-4

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